InGaN quantum dots grown by MOVPE via a droplet epitaxy route
A novel method for the growth of InGaN quantum dots (QDs) by metal-organic vapour phase epitaxy (MOVPE) is described. A thin InGaN epilayer is grown on a GaN buffer layer and then annealed at growth temperature in molecular nitrogen inducing QD formation. The photolummescence from the dot ensemble i...
| Main Authors: | , , , , , , , , |
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| Format: | Conference item |
| Published: |
2004
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