Nucleation, growth and size distributions of Ge islands on Si(001): in-situ STM studies

Heteroepitaxial Ge/Si(001) growth has been investigated using in-situ scanning tunneling microscopy. Once the mismatch strain exceeds a critical value it is relieved either by the formation of coherent three-dimensional islands or pits, depending upon growth dependence of growth rate. Although late-...

Полное описание

Библиографические подробности
Главные авторы: Goldfarb, I, Owen, J, Hayden, P, Miki, K, Briggs, G
Формат: Conference item
Опубликовано: 1997