Nucleation, growth and size distributions of Ge islands on Si(001): in-situ STM studies
Heteroepitaxial Ge/Si(001) growth has been investigated using in-situ scanning tunneling microscopy. Once the mismatch strain exceeds a critical value it is relieved either by the formation of coherent three-dimensional islands or pits, depending upon growth dependence of growth rate. Although late-...
| Main Authors: | , , , , |
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| Format: | Conference item |
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1997
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| Summary: | Heteroepitaxial Ge/Si(001) growth has been investigated using in-situ scanning tunneling microscopy. Once the mismatch strain exceeds a critical value it is relieved either by the formation of coherent three-dimensional islands or pits, depending upon growth dependence of growth rate. Although late-stage island growth is often attributed to Ostwald ripening, in the case of Ge/Si(001), due to the energy barrier at the island base, other growth mechanisms are found to dominate at temperatures below 700 K. |
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