Nucleation, growth and size distributions of Ge islands on Si(001): in-situ STM studies
Heteroepitaxial Ge/Si(001) growth has been investigated using in-situ scanning tunneling microscopy. Once the mismatch strain exceeds a critical value it is relieved either by the formation of coherent three-dimensional islands or pits, depending upon growth dependence of growth rate. Although late-...
| Asıl Yazarlar: | , , , , |
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| Materyal Türü: | Conference item |
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1997
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| _version_ | 1826292573297180672 |
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| author | Goldfarb, I Owen, J Hayden, P Miki, K Briggs, G |
| author_facet | Goldfarb, I Owen, J Hayden, P Miki, K Briggs, G |
| author_sort | Goldfarb, I |
| collection | OXFORD |
| description | Heteroepitaxial Ge/Si(001) growth has been investigated using in-situ scanning tunneling microscopy. Once the mismatch strain exceeds a critical value it is relieved either by the formation of coherent three-dimensional islands or pits, depending upon growth dependence of growth rate. Although late-stage island growth is often attributed to Ostwald ripening, in the case of Ge/Si(001), due to the energy barrier at the island base, other growth mechanisms are found to dominate at temperatures below 700 K. |
| first_indexed | 2024-03-07T03:16:47Z |
| format | Conference item |
| id | oxford-uuid:b60ba5d0-f5b8-4939-83a3-30ffd3e3b13e |
| institution | University of Oxford |
| last_indexed | 2024-03-07T03:16:47Z |
| publishDate | 1997 |
| record_format | dspace |
| spelling | oxford-uuid:b60ba5d0-f5b8-4939-83a3-30ffd3e3b13e2022-03-27T04:38:11ZNucleation, growth and size distributions of Ge islands on Si(001): in-situ STM studiesConference itemhttp://purl.org/coar/resource_type/c_5794uuid:b60ba5d0-f5b8-4939-83a3-30ffd3e3b13eSymplectic Elements at Oxford1997Goldfarb, IOwen, JHayden, PMiki, KBriggs, GHeteroepitaxial Ge/Si(001) growth has been investigated using in-situ scanning tunneling microscopy. Once the mismatch strain exceeds a critical value it is relieved either by the formation of coherent three-dimensional islands or pits, depending upon growth dependence of growth rate. Although late-stage island growth is often attributed to Ostwald ripening, in the case of Ge/Si(001), due to the energy barrier at the island base, other growth mechanisms are found to dominate at temperatures below 700 K. |
| spellingShingle | Goldfarb, I Owen, J Hayden, P Miki, K Briggs, G Nucleation, growth and size distributions of Ge islands on Si(001): in-situ STM studies |
| title | Nucleation, growth and size distributions of Ge islands on Si(001): in-situ STM studies |
| title_full | Nucleation, growth and size distributions of Ge islands on Si(001): in-situ STM studies |
| title_fullStr | Nucleation, growth and size distributions of Ge islands on Si(001): in-situ STM studies |
| title_full_unstemmed | Nucleation, growth and size distributions of Ge islands on Si(001): in-situ STM studies |
| title_short | Nucleation, growth and size distributions of Ge islands on Si(001): in-situ STM studies |
| title_sort | nucleation growth and size distributions of ge islands on si 001 in situ stm studies |
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