SURFACE DECOMPOSITION MECHANISM OF THE NOVEL PRECURSOR BISTRIMETHYLAMINE ALUMINUM-HYDRIDE ON GAAS(100)
The surface decomposition mechanism of bistrimethylamine aluminium hydride [(Me3N)2 · AIH3] on the Ga-rich (4 × 1) GaAs (100) surface is studied by TDS, HREELS and XPS. It is found that the first monolayer of the complex chemisorbs molecularly at 150 K. The decomposition pathway is shown to involve...
| Glavni autori: | , , , , |
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| Format: | Journal article |
| Jezik: | English |
| Izdano: |
1990
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