ANALYSIS OF DEFECTS IN BULK SEMICONDUCTORS USING ELECTRON CHANNELING CONTRAST IMAGING
Autors principals: | Czernuszka, J, Long, N, Hirsch, P |
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Format: | Journal article |
Publicat: |
1991
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Ítems similars
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ANALYSIS OF DEFECTS IN BULK SEMICONDUCTORS USING ELECTRON CHANNELING CONTRAST IMAGING
per: Czernuszka, J, et al.
Publicat: (1991) -
ELECTRON CHANNELING CONTRAST IMAGING OF DEFECTS IN SEMICONDUCTORS
per: Wilkinson, A, et al.
Publicat: (1993) -
ELECTRON CHANNELING CONTRAST IMAGING (ECCI) OF DISLOCATIONS IN BULK SPECIMENS
per: Czernuszka, J, et al.
Publicat: (1991) -
ELECTRON CHANNELING CONTRAST IMAGING OF INTERFACIAL DEFECTS IN STRAINED SILICON-GERMANIUM LAYERS ON SILICON
per: Wilkinson, A, et al.
Publicat: (1993) -
Effects of surface relaxation on electron channelling contrast images of misfit dislocations
per: Wilkinson, A, et al.
Publicat: (1994)