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ANALYSIS OF DEFECTS IN BULK SE...
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Doalvun: RefWorks
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Bissovaš liŋka
ANALYSIS OF DEFECTS IN BULK SEMICONDUCTORS USING ELECTRON CHANNELING CONTRAST IMAGING
Čájet eará veršuvnnaid (1)
Bibliográfalaš dieđut
Váldodahkkit:
Czernuszka, J
,
Long, N
,
Hirsch, P
Materiálatiipa:
Journal article
Almmustuhtton:
1991
Oažžasuvvandieđut
Govvádus
Eará veršuvnnat (1)
Geahča maid
Bargiidšearbma
Geahča maid
ANALYSIS OF DEFECTS IN BULK SEMICONDUCTORS USING ELECTRON CHANNELING CONTRAST IMAGING
Dahkki: Czernuszka, J, et al.
Almmustuhtton: (1991)
ELECTRON CHANNELING CONTRAST IMAGING OF DEFECTS IN SEMICONDUCTORS
Dahkki: Wilkinson, A, et al.
Almmustuhtton: (1993)
ELECTRON CHANNELING CONTRAST IMAGING (ECCI) OF DISLOCATIONS IN BULK SPECIMENS
Dahkki: Czernuszka, J, et al.
Almmustuhtton: (1991)
ELECTRON CHANNELING CONTRAST IMAGING OF INTERFACIAL DEFECTS IN STRAINED SILICON-GERMANIUM LAYERS ON SILICON
Dahkki: Wilkinson, A, et al.
Almmustuhtton: (1993)
Effects of surface relaxation on electron channelling contrast images of misfit dislocations
Dahkki: Wilkinson, A, et al.
Almmustuhtton: (1994)