ANALYSIS OF DEFECTS IN BULK SEMICONDUCTORS USING ELECTRON CHANNELING CONTRAST IMAGING
Κύριοι συγγραφείς: | Czernuszka, J, Long, N, Hirsch, P |
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Μορφή: | Journal article |
Έκδοση: |
1991
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Παρόμοια τεκμήρια
Παρόμοια τεκμήρια
-
ANALYSIS OF DEFECTS IN BULK SEMICONDUCTORS USING ELECTRON CHANNELING CONTRAST IMAGING
ανά: Czernuszka, J, κ.ά.
Έκδοση: (1991) -
ELECTRON CHANNELING CONTRAST IMAGING OF DEFECTS IN SEMICONDUCTORS
ανά: Wilkinson, A, κ.ά.
Έκδοση: (1993) -
ELECTRON CHANNELING CONTRAST IMAGING (ECCI) OF DISLOCATIONS IN BULK SPECIMENS
ανά: Czernuszka, J, κ.ά.
Έκδοση: (1991) -
ELECTRON CHANNELING CONTRAST IMAGING OF INTERFACIAL DEFECTS IN STRAINED SILICON-GERMANIUM LAYERS ON SILICON
ανά: Wilkinson, A, κ.ά.
Έκδοση: (1993) -
Effects of surface relaxation on electron channelling contrast images of misfit dislocations
ανά: Wilkinson, A, κ.ά.
Έκδοση: (1994)