ANALYSIS OF DEFECTS IN BULK SEMICONDUCTORS USING ELECTRON CHANNELING CONTRAST IMAGING
मुख्य लेखकों: | Czernuszka, J, Long, N, Hirsch, P |
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स्वरूप: | Journal article |
प्रकाशित: |
1991
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समान संसाधन
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ANALYSIS OF DEFECTS IN BULK SEMICONDUCTORS USING ELECTRON CHANNELING CONTRAST IMAGING
द्वारा: Czernuszka, J, और अन्य
प्रकाशित: (1991) -
ELECTRON CHANNELING CONTRAST IMAGING OF DEFECTS IN SEMICONDUCTORS
द्वारा: Wilkinson, A, और अन्य
प्रकाशित: (1993) -
ELECTRON CHANNELING CONTRAST IMAGING (ECCI) OF DISLOCATIONS IN BULK SPECIMENS
द्वारा: Czernuszka, J, और अन्य
प्रकाशित: (1991) -
ELECTRON CHANNELING CONTRAST IMAGING OF INTERFACIAL DEFECTS IN STRAINED SILICON-GERMANIUM LAYERS ON SILICON
द्वारा: Wilkinson, A, और अन्य
प्रकाशित: (1993) -
Effects of surface relaxation on electron channelling contrast images of misfit dislocations
द्वारा: Wilkinson, A, और अन्य
प्रकाशित: (1994)