ANALYSIS OF DEFECTS IN BULK SEMICONDUCTORS USING ELECTRON CHANNELING CONTRAST IMAGING
Váldodahkkit: | Czernuszka, J, Long, N, Hirsch, P |
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Materiálatiipa: | Journal article |
Almmustuhtton: |
1991
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Geahča maid
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ANALYSIS OF DEFECTS IN BULK SEMICONDUCTORS USING ELECTRON CHANNELING CONTRAST IMAGING
Dahkki: Czernuszka, J, et al.
Almmustuhtton: (1991) -
ELECTRON CHANNELING CONTRAST IMAGING OF DEFECTS IN SEMICONDUCTORS
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ELECTRON CHANNELING CONTRAST IMAGING OF INTERFACIAL DEFECTS IN STRAINED SILICON-GERMANIUM LAYERS ON SILICON
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Effects of surface relaxation on electron channelling contrast images of misfit dislocations
Dahkki: Wilkinson, A, et al.
Almmustuhtton: (1994)