ANALYSIS OF DEFECTS IN BULK SEMICONDUCTORS USING ELECTRON CHANNELING CONTRAST IMAGING

Míreanna comhchosúla

• ANALYSIS OF DEFECTS IN BULK SEMICONDUCTORS USING ELECTRON CHANNELING CONTRAST IMAGING
  de réir: Czernuszka, J, et al.
  Foilsithe / Cruthaithe: (1991)
• ELECTRON CHANNELING CONTRAST IMAGING OF DEFECTS IN SEMICONDUCTORS
  de réir: Wilkinson, A, et al.
  Foilsithe / Cruthaithe: (1993)
• ELECTRON CHANNELING CONTRAST IMAGING (ECCI) OF DISLOCATIONS IN BULK SPECIMENS
  de réir: Czernuszka, J, et al.
  Foilsithe / Cruthaithe: (1991)
• ELECTRON CHANNELING CONTRAST IMAGING OF INTERFACIAL DEFECTS IN STRAINED SILICON-GERMANIUM LAYERS ON SILICON
  de réir: Wilkinson, A, et al.
  Foilsithe / Cruthaithe: (1993)
• Effects of surface relaxation on electron channelling contrast images of misfit dislocations
  de réir: Wilkinson, A, et al.
  Foilsithe / Cruthaithe: (1994)