Self-organized amorphous material in silicon(001) by focused ion beam (FIB) system

A method using a focused ion beam (FIB) to prepare a silicon amorphous material is presented. The method involves the redeposition of sputtered material generated during the interaction of the Ga+ ion beam with a silicon substrate material. The shape and dimensions of this amorphous material are sel...

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Bibliographic Details
Main Authors: Huang, Y, Cockayne, D, Marsh, C, Titchmarsh, J, Petford-Long, A
Format: Journal article
Language:English
Published: 2005