GETTERING OF COPPER TO OXIDATION INDUCED STACKING-FAULTS IN SILICON
Results are presented from an investigation concerning the influence of oxidation-induced stacking faults, their bounding partial dislocations, and mechanically-induced surface pits on the precipitation behaviour of copper in silicon. Controlled amounts of copper are diffused into wafers containing...
| Main Authors: | , , |
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| Format: | Journal article |
| Language: | English |
| Published: |
1990
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