GETTERING OF COPPER TO OXIDATION INDUCED STACKING-FAULTS IN SILICON
Results are presented from an investigation concerning the influence of oxidation-induced stacking faults, their bounding partial dislocations, and mechanically-induced surface pits on the precipitation behaviour of copper in silicon. Controlled amounts of copper are diffused into wafers containing...
| Main Authors: | , , |
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| Format: | Journal article |
| Language: | English |
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1990
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| _version_ | 1797090578576441344 |
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| author | Decoteau, M Wilshaw, P Falster, R |
| author_facet | Decoteau, M Wilshaw, P Falster, R |
| author_sort | Decoteau, M |
| collection | OXFORD |
| description | Results are presented from an investigation concerning the influence of oxidation-induced stacking faults, their bounding partial dislocations, and mechanically-induced surface pits on the precipitation behaviour of copper in silicon. Controlled amounts of copper are diffused into wafers containing such defect structures so that their effect on precipitation behaviour can be studied using TEM and preferential etching techniques. These studies indicate the relative efficiencies of the different defect types as centres for the precipitation of copper and also reveal the different precipitate structures which are produced. |
| first_indexed | 2024-03-07T03:20:39Z |
| format | Journal article |
| id | oxford-uuid:b74e6b1d-768c-4333-b292-eaaf1f2c2622 |
| institution | University of Oxford |
| language | English |
| last_indexed | 2024-03-07T03:20:39Z |
| publishDate | 1990 |
| record_format | dspace |
| spelling | oxford-uuid:b74e6b1d-768c-4333-b292-eaaf1f2c26222022-03-27T04:47:31ZGETTERING OF COPPER TO OXIDATION INDUCED STACKING-FAULTS IN SILICONJournal articlehttp://purl.org/coar/resource_type/c_dcae04bcuuid:b74e6b1d-768c-4333-b292-eaaf1f2c2622EnglishSymplectic Elements at Oxford1990Decoteau, MWilshaw, PFalster, RResults are presented from an investigation concerning the influence of oxidation-induced stacking faults, their bounding partial dislocations, and mechanically-induced surface pits on the precipitation behaviour of copper in silicon. Controlled amounts of copper are diffused into wafers containing such defect structures so that their effect on precipitation behaviour can be studied using TEM and preferential etching techniques. These studies indicate the relative efficiencies of the different defect types as centres for the precipitation of copper and also reveal the different precipitate structures which are produced. |
| spellingShingle | Decoteau, M Wilshaw, P Falster, R GETTERING OF COPPER TO OXIDATION INDUCED STACKING-FAULTS IN SILICON |
| title | GETTERING OF COPPER TO OXIDATION INDUCED STACKING-FAULTS IN SILICON |
| title_full | GETTERING OF COPPER TO OXIDATION INDUCED STACKING-FAULTS IN SILICON |
| title_fullStr | GETTERING OF COPPER TO OXIDATION INDUCED STACKING-FAULTS IN SILICON |
| title_full_unstemmed | GETTERING OF COPPER TO OXIDATION INDUCED STACKING-FAULTS IN SILICON |
| title_short | GETTERING OF COPPER TO OXIDATION INDUCED STACKING-FAULTS IN SILICON |
| title_sort | gettering of copper to oxidation induced stacking faults in silicon |
| work_keys_str_mv | AT decoteaum getteringofcoppertooxidationinducedstackingfaultsinsilicon AT wilshawp getteringofcoppertooxidationinducedstackingfaultsinsilicon AT falsterr getteringofcoppertooxidationinducedstackingfaultsinsilicon |