High-temperature performance of non-polar (11–20) InGaN quantum dots grown by a quasi-two-temperature method
Non-polar (11–20) a-plane InGaN quantum dots (QDs) are one of the strongest candidates to achieve on-chip applications of polarised single photon sources, which require a minimum operation temperature of ∼200 K under thermoelectrically cooled conditions. In order to further improve the material qual...
| Main Authors: | , , , , , |
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| Format: | Journal article |
| Published: |
Wiley
2017
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