Improved performance of multilayer InAs/GaAs quantum-dot solar cells using a high-growth-temperature GaAs spacer layer
The use of high-growth-temperature GaAs spacer layers is demonstrated to significantly enhance the performance of multilayer InAs/GaAs quantum-dot solar cells. Threading dislocations are observed for a 30-layer quantum-dot structure with GaAs spacer layers grown at low temperature (510°C). The forma...
| Main Authors: | , , , , , , , |
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| Format: | Journal article |
| Language: | English |
| Published: |
2012
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