Improved performance of multilayer InAs/GaAs quantum-dot solar cells using a high-growth-temperature GaAs spacer layer
The use of high-growth-temperature GaAs spacer layers is demonstrated to significantly enhance the performance of multilayer InAs/GaAs quantum-dot solar cells. Threading dislocations are observed for a 30-layer quantum-dot structure with GaAs spacer layers grown at low temperature (510°C). The forma...
| Główni autorzy: | , , , , , , , |
|---|---|
| Format: | Journal article |
| Język: | English |
| Wydane: |
2012
|
| _version_ | 1826293084196962304 |
|---|---|
| author | Tutu, F Sellers, I Peinado, MG Pastore, C Willis, S Watt, A Wang, T Liu, H |
| author_facet | Tutu, F Sellers, I Peinado, MG Pastore, C Willis, S Watt, A Wang, T Liu, H |
| author_sort | Tutu, F |
| collection | OXFORD |
| description | The use of high-growth-temperature GaAs spacer layers is demonstrated to significantly enhance the performance of multilayer InAs/GaAs quantum-dot solar cells. Threading dislocations are observed for a 30-layer quantum-dot structure with GaAs spacer layers grown at low temperature (510°C). The formation of threading dislocations is suppressed by growing the GaAs spacer layer at high temperature (580°C), leading to enhanced quantum-dot optical and structural characteristics. Incorporation of the high-growth-temperature GaAs spacer layers into a 30-layer InAs/GaAs quantum-dot solar cell results in a dramatic increase in the short-circuit current compared to the one without the high-growth-temperature spacer layers and an increase in the short-circuit current compared to the reference GaAs solar cell. © 2012 American Institute of Physics. |
| first_indexed | 2024-03-07T03:24:38Z |
| format | Journal article |
| id | oxford-uuid:b89f6c6f-ccc0-45ba-bc81-d4814d136737 |
| institution | University of Oxford |
| language | English |
| last_indexed | 2024-03-07T03:24:38Z |
| publishDate | 2012 |
| record_format | dspace |
| spelling | oxford-uuid:b89f6c6f-ccc0-45ba-bc81-d4814d1367372022-03-27T04:57:07ZImproved performance of multilayer InAs/GaAs quantum-dot solar cells using a high-growth-temperature GaAs spacer layerJournal articlehttp://purl.org/coar/resource_type/c_dcae04bcuuid:b89f6c6f-ccc0-45ba-bc81-d4814d136737EnglishSymplectic Elements at Oxford2012Tutu, FSellers, IPeinado, MGPastore, CWillis, SWatt, AWang, TLiu, HThe use of high-growth-temperature GaAs spacer layers is demonstrated to significantly enhance the performance of multilayer InAs/GaAs quantum-dot solar cells. Threading dislocations are observed for a 30-layer quantum-dot structure with GaAs spacer layers grown at low temperature (510°C). The formation of threading dislocations is suppressed by growing the GaAs spacer layer at high temperature (580°C), leading to enhanced quantum-dot optical and structural characteristics. Incorporation of the high-growth-temperature GaAs spacer layers into a 30-layer InAs/GaAs quantum-dot solar cell results in a dramatic increase in the short-circuit current compared to the one without the high-growth-temperature spacer layers and an increase in the short-circuit current compared to the reference GaAs solar cell. © 2012 American Institute of Physics. |
| spellingShingle | Tutu, F Sellers, I Peinado, MG Pastore, C Willis, S Watt, A Wang, T Liu, H Improved performance of multilayer InAs/GaAs quantum-dot solar cells using a high-growth-temperature GaAs spacer layer |
| title | Improved performance of multilayer InAs/GaAs quantum-dot solar cells using a high-growth-temperature GaAs spacer layer |
| title_full | Improved performance of multilayer InAs/GaAs quantum-dot solar cells using a high-growth-temperature GaAs spacer layer |
| title_fullStr | Improved performance of multilayer InAs/GaAs quantum-dot solar cells using a high-growth-temperature GaAs spacer layer |
| title_full_unstemmed | Improved performance of multilayer InAs/GaAs quantum-dot solar cells using a high-growth-temperature GaAs spacer layer |
| title_short | Improved performance of multilayer InAs/GaAs quantum-dot solar cells using a high-growth-temperature GaAs spacer layer |
| title_sort | improved performance of multilayer inas gaas quantum dot solar cells using a high growth temperature gaas spacer layer |
| work_keys_str_mv | AT tutuf improvedperformanceofmultilayerinasgaasquantumdotsolarcellsusingahighgrowthtemperaturegaasspacerlayer AT sellersi improvedperformanceofmultilayerinasgaasquantumdotsolarcellsusingahighgrowthtemperaturegaasspacerlayer AT peinadomg improvedperformanceofmultilayerinasgaasquantumdotsolarcellsusingahighgrowthtemperaturegaasspacerlayer AT pastorec improvedperformanceofmultilayerinasgaasquantumdotsolarcellsusingahighgrowthtemperaturegaasspacerlayer AT williss improvedperformanceofmultilayerinasgaasquantumdotsolarcellsusingahighgrowthtemperaturegaasspacerlayer AT watta improvedperformanceofmultilayerinasgaasquantumdotsolarcellsusingahighgrowthtemperaturegaasspacerlayer AT wangt improvedperformanceofmultilayerinasgaasquantumdotsolarcellsusingahighgrowthtemperaturegaasspacerlayer AT liuh improvedperformanceofmultilayerinasgaasquantumdotsolarcellsusingahighgrowthtemperaturegaasspacerlayer |