Improved performance of multilayer InAs/GaAs quantum-dot solar cells using a high-growth-temperature GaAs spacer layer

Improved performance of multilayer InAs/GaAs quantum-dot solar cells using a high-growth-temperature GaAs spacer layer

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The use of high-growth-temperature GaAs spacer layers is demonstrated to significantly enhance the performance of multilayer InAs/GaAs quantum-dot solar cells. Threading dislocations are observed for a 30-layer quantum-dot structure with GaAs spacer layers grown at low temperature (510°C). The forma...

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Bibliographic Details
Main Authors:	Tutu, F, Sellers, I, Peinado, MG, Pastore, C, Willis, S, Watt, A, Wang, T, Liu, H
Format:	Journal article
Language:	English
Published:	2012

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