SEGREGATION TO GRAIN BOUNDARIES IN Si.
Scanning transmission electron microscopic (STEM) analysis has been applied to the study of equilibrium segregation of As to grain boundaries in Si. Direct quantitative evidence for the extent of segregation has been obtained in a number of specimens heated to temperatures between 1000 and 700 degre...
| Main Authors: | , , , |
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| פורמט: | Journal article |
| שפה: | English |
| יצא לאור: |
1984
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