Boron diffusion in nanocrystalline 3C-SiC
The diffusion of boron in nanocrystalline silicon carbide (nc-SiC) films with a grain size of 4-7 nm is studied using a poly-Si boron source. Diffusion is found to be much faster than in monocrystalline SiC as it takes place within the grain boundary (GB) network. Drive-in temperatures of 900-1000 °...
| Príomhchruthaitheoirí: | , , , , , , , , |
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| Formáid: | Journal article |
| Teanga: | English |
| Foilsithe / Cruthaithe: |
American Institute of Physics Inc.
2014
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