SELECTIVE-AREA GROWTH OF III-V SEMICONDUCTORS BY CHEMICAL BEAM EPITAXY - STUDY OF REACTION-MECHANISMS

SELECTIVE-AREA GROWTH OF III-V SEMICONDUCTORS BY CHEMICAL BEAM EPITAXY - STUDY OF REACTION-MECHANISMS

Manylion Llyfryddiaeth
Prif Awduron:	Davies, G, Skevington, P, Foord, J, French, C, Levoguer, C
Fformat:	Conference item
Cyhoeddwyd:	1994

Eitemau Tebyg

REACTION-MECHANISMS GOVERNING THE SELECTED-AREA GROWTH OF III-V SEMICONDUCTORS BY CHEMICAL BEAM EPITAXY
gan: Foord, J, et al.
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SURFACE-REACTION MECHANISMS GOVERNING THE SELECTIVE AREA GROWTH OF III-V COMPOUND SEMICONDUCTORS BY CHEMICAL BEAM EPITAXY
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REACTION MODELS FOR THE EPITAXIAL-GROWTH OF III-V SEMICONDUCTORS BY CHEMICAL BEAM EPITAXY
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SELECTIVE AREA GROWTH OF III-V-COMPOUND SEMICONDUCTORS BY CHEMICAL BEAM EPITAXY
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SOME COMPARISONS OF CHEMICAL BEAM EPITAXY WITH GAS SOURCE MOLECULAR-BEAM EPITAXY
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An investigation of ZnSe growth by chemical beam epitaxy using modulated beam scattering and related techniques
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SOME COMPARISONS OF CHEMICAL BEAM EPITAXY INGAAS/INP GROWTH USING TRIETHYLGALLIUM, TRIISOPROPYLGALLIUM AND TRIISOBUTYLGALLIUM SOURCES
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SURFACE-REACTION MECHANISMS IN CHEMICAL BEAM EPITAXY
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MODULATED MOLECULAR-BEAM MASS-SPECTROMETRY STUDIES OF THE GROWTH OF GAAS AND INXGA1-XAS USING TRI-ISOBUTYLGALLIUM
gan: Levoguer, C, et al.
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Chemical Beam Epitaxy of Compound Semiconductors
gan: Kolodziejski, Leslie A., et al.
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Chemical Beam Epitaxy of Compound Semiconductors
gan: Kolodziejski, Leslie A., et al.
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Chemical Beam Epitaxy of Compound Semiconductors
gan: Kolodziejski, Leslie A., et al.
Cyhoeddwyd: (2010)

Chemical Beam Epitaxy of Compound Semiconductors
gan: Kolodziejski, Leslie A., et al.
Cyhoeddwyd: (2010)

Chemical Beam Epitaxy of Compound Semiconductors
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SELECTIVE AREA GROWTH FOR OPTOELECTRONIC INTEGRATED-CIRCUITS (OEICS)
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Principles of Selective Area Epitaxy and Applications in III–V Semiconductor Lasers Using MOCVD: A Review
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DEVELOPMENT OF CHEMICAL BEAM EPITAXY FOR THE DEPOSITION OF GALLIUM NITRIDE
gan: Kingsley, C, et al.
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Epitaxy of III-V semiconductor nanowires towards optoelectronic devices
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CHEMICAL BEAM EPITAXY AND RELATED GROWTH TECHNIQUES 1991 - PROCEEDINGS OF THE 3RD INTERNATIONAL-CONFERENCE ON CHEMICAL BEAM EPITAXY AND RELATED GROWTH TECHNIQUES OXFORD, UK, 1-5 SEPTEMBER 1991 - PREFACE
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Reactivity patterns of stibine and trisdimethylaminoantimony precursors for chemical beam epitaxial growth and etching
gan: Foord, J, et al.
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Growth and mechanistic studies of diamond formation by chemical beam epitaxy using methyl and acetylene precursors
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Multilayer Epitaxial Heterostructures with Multi-Component III–V:Fe Magnetic Semiconductors
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Mid-infrared III–V semiconductor lasers epitaxially grown on Si substrates
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Gas Source Molecular Beam Epitaxy of Compound Semiconductors
gan: Kolodziejski, Leslie A., et al.
Cyhoeddwyd: (2010)

Gas Source Molecular Beam Epitaxy of Compound Semiconductors
gan: Kolodziejski, Leslie A., et al.
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Gas Source Molecular Beam Epitaxy of Compound Semiconductors
gan: Kolodziejski, Leslie A., et al.
Cyhoeddwyd: (2010)

Characterisation of compound semiconductors grown by molecular beam epitaxy
gan: Zhang, Peng Hua
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Molecular beam epitaxial growth of semiconductor heterostructures for THz electronics
gan: Ustinov Victor M.
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Recent advances in the Van der Waals epitaxy growth of III‐V semiconductor nanowires on graphene
gan: Ezekiel Anyebe Anyebe, et al.
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The effect of V : III ratio on the growth of InN nanostructures by molecular beam epitaxy
gan: Oliver, R, et al.
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SURFACE CHEMICAL PROCESSES IN METAL ORGANIC MOLECULAR-BEAM EPITAXY - GA DEPOSITION FROM TRIETHYLGALLIUM ON GAAS(100)
gan: Murrell, A, et al.
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Molecular beam epitaxy of Cd3As2 on a III-V substrate
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Photoluminescence studies of compound semiconductor structures grown by molecular beam epitaxy
gan: Li, He Ming.
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Synthesis of long group IV semiconductor nanowires by molecular beam epitaxy
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In Situ and Real-Time Monitoring of Doping Levels by Reflectance Anisotropy Spectroscopy (RAS) during Molecular Beam Epitaxial (MBE) Growth of III/V Semiconductors
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GROWTH AND MBMS STUDIES OF REACTION-MECHANISMS FOR INXGA1-XAS CBE
gan: Singh, N, et al.
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HREELS STUDIES OF C2H4 ADSORPTION ON III-V SEMICONDUCTOR SURFACES
gan: Fitzgerald, E, et al.
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Engineering III-V nanowires for optoelectronics: from epitaxy to terahertz photonics
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Wet-chemical synthesis and applications of semiconductor nanomaterial-based epitaxial heterostructures
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Wet-Chemical Synthesis and Applications of Semiconductor Nanomaterial-Based Epitaxial Heterostructures
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