SELECTIVE-AREA GROWTH OF III-V SEMICONDUCTORS BY CHEMICAL BEAM EPITAXY - STUDY OF REACTION-MECHANISMS
मुख्य लेखकों: | Davies, G, Skevington, P, Foord, J, French, C, Levoguer, C |
---|---|
स्वरूप: | Conference item |
प्रकाशित: |
1994
|
समान संसाधन
-
REACTION-MECHANISMS GOVERNING THE SELECTED-AREA GROWTH OF III-V SEMICONDUCTORS BY CHEMICAL BEAM EPITAXY
द्वारा: Foord, J, और अन्य
प्रकाशित: (1993) -
SURFACE-REACTION MECHANISMS GOVERNING THE SELECTIVE AREA GROWTH OF III-V COMPOUND SEMICONDUCTORS BY CHEMICAL BEAM EPITAXY
द्वारा: Davies, G, और अन्य
प्रकाशित: (1993) -
REACTION MODELS FOR THE EPITAXIAL-GROWTH OF III-V SEMICONDUCTORS BY CHEMICAL BEAM EPITAXY
द्वारा: Foord, J, और अन्य
प्रकाशित: (1993) -
SELECTIVE AREA GROWTH OF III-V-COMPOUND SEMICONDUCTORS BY CHEMICAL BEAM EPITAXY
द्वारा: Davies, G, और अन्य
प्रकाशित: (1992) -
SOME COMPARISONS OF CHEMICAL BEAM EPITAXY WITH GAS SOURCE MOLECULAR-BEAM EPITAXY
द्वारा: Davies, G, और अन्य
प्रकाशित: (1991)