Fabrication and assessment of optimized InGaAs single-junction TPV cells
Using a modeling approach, InP lattice-matched InGaAs-based TPV cell structures were optimized as a function of the doping concentration and thickness of the active region. The devices were subsequently grown, fabricated and assessed. The modeling study shows that low doping concentrations for the a...
| 主要な著者: | , , , |
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| フォーマット: | Conference item |
| 出版事項: |
2007
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