The Development of Semi-Insulating Silicon Substrates for Microwave Devices
The concept of fully encapsulated, semi-insulating silicon (SI-Si) Czochralski silicon on insulator substrates for silicon microwave devices is presented. The experimental results show that, using gold as a compensating deep level impurity in silicon, a resistivity of 180 kΩ cm is achieved in this w...
| Main Authors: | , , , , |
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| Format: | Journal article |
| Language: | English |
| Published: |
2010
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