Band-gap shrinkage in n-type-doped CdO probed by photoemission spectroscopy
The influence of n-type doping CdO with In or Y has been investigated by high-resolution ultraviolet and x-ray photoemission spectroscopy. It is found that core levels and valence band features suffer a shift to high binding energy due to doping. However this shift is less than the change in the wid...
मुख्य लेखकों: | Dou, Y, Fishlock, T, Egdell, R, Law, D, Beamson, G |
---|---|
स्वरूप: | Journal article |
भाषा: | English |
प्रकाशित: |
American Physical Society
1997
|
विषय: |
समान संसाधन
-
Nature of band-gap states in V-doped TiO2 revealed by resonant photoemission
द्वारा: Morris, D, और अन्य
प्रकाशित: (1997) -
Band-gap shrinkage in n-type-doped CdO probed by photoemission spectroscopy
द्वारा: Dou, Y, और अन्य
प्रकाशित: (1997) -
n-type doping in Cd2SnO4: a study by EELS and photoemission
द्वारा: Dou, Y, और अन्य
प्रकाशित: (1996) -
Photoemission and STM study of the electronic structure of Nb-doped TiO2
द्वारा: Morris, D, और अन्य
प्रकाशित: (2000) -
A study of core and valence levels in β-PbO₂ by hard X-ray photoemission
द्वारा: Payne, D, और अन्य
प्रकाशित: (2009)