Band-gap shrinkage in n-type-doped CdO probed by photoemission spectroscopy

The influence of n-type doping CdO with In or Y has been investigated by high-resolution ultraviolet and x-ray photoemission spectroscopy. It is found that core levels and valence band features suffer a shift to high binding energy due to doping. However this shift is less than the change in the wid...

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मुख्य लेखकों: Dou, Y, Fishlock, T, Egdell, R, Law, D, Beamson, G
स्वरूप: Journal article
भाषा:English
प्रकाशित: American Physical Society 1997
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