The adsorption and decomposition of H2S on Ge(001): An STM study

The preparation of a nominal half-monolayer of sulphur on the Ge(001) surface via the adsorption of H2S and subsequent annealing has been monitored by STM. The 'saturated adsorption' surface image of dark-bright pairs is consistent with the dissociative adsorption of H and HS, respectively...

詳細記述

書誌詳細
主要な著者: McGovern, I, Ozer, H, Pethica, J, Egdell, R
フォーマット: Journal article
言語:English
出版事項: 2009