The adsorption and decomposition of H2S on Ge(001): An STM study
The preparation of a nominal half-monolayer of sulphur on the Ge(001) surface via the adsorption of H2S and subsequent annealing has been monitored by STM. The 'saturated adsorption' surface image of dark-bright pairs is consistent with the dissociative adsorption of H and HS, respectively...
| Main Authors: | , , , |
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| Format: | Journal article |
| Language: | English |
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2009
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| _version_ | 1797091560926478336 |
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| author | McGovern, I Ozer, H Pethica, J Egdell, R |
| author_facet | McGovern, I Ozer, H Pethica, J Egdell, R |
| author_sort | McGovern, I |
| collection | OXFORD |
| description | The preparation of a nominal half-monolayer of sulphur on the Ge(001) surface via the adsorption of H2S and subsequent annealing has been monitored by STM. The 'saturated adsorption' surface image of dark-bright pairs is consistent with the dissociative adsorption of H and HS, respectively, on either atom of each Ge dimer. Images obtained at subsequent annealing stages show significant etching of the germanium surface, which is not detectable by electron spectroscopy. These STM images do not show evidence of the bridge-bonded sulphur that ideally results from this recipe. © 2009 The Surface Science Society of Japan. |
| first_indexed | 2024-03-07T03:34:50Z |
| format | Journal article |
| id | oxford-uuid:bbef0c54-7949-4ff5-9154-73b04c89f49c |
| institution | University of Oxford |
| language | English |
| last_indexed | 2024-03-07T03:34:50Z |
| publishDate | 2009 |
| record_format | dspace |
| spelling | oxford-uuid:bbef0c54-7949-4ff5-9154-73b04c89f49c2022-03-27T05:20:40ZThe adsorption and decomposition of H2S on Ge(001): An STM studyJournal articlehttp://purl.org/coar/resource_type/c_dcae04bcuuid:bbef0c54-7949-4ff5-9154-73b04c89f49cEnglishSymplectic Elements at Oxford2009McGovern, IOzer, HPethica, JEgdell, RThe preparation of a nominal half-monolayer of sulphur on the Ge(001) surface via the adsorption of H2S and subsequent annealing has been monitored by STM. The 'saturated adsorption' surface image of dark-bright pairs is consistent with the dissociative adsorption of H and HS, respectively, on either atom of each Ge dimer. Images obtained at subsequent annealing stages show significant etching of the germanium surface, which is not detectable by electron spectroscopy. These STM images do not show evidence of the bridge-bonded sulphur that ideally results from this recipe. © 2009 The Surface Science Society of Japan. |
| spellingShingle | McGovern, I Ozer, H Pethica, J Egdell, R The adsorption and decomposition of H2S on Ge(001): An STM study |
| title | The adsorption and decomposition of H2S on Ge(001): An STM study |
| title_full | The adsorption and decomposition of H2S on Ge(001): An STM study |
| title_fullStr | The adsorption and decomposition of H2S on Ge(001): An STM study |
| title_full_unstemmed | The adsorption and decomposition of H2S on Ge(001): An STM study |
| title_short | The adsorption and decomposition of H2S on Ge(001): An STM study |
| title_sort | adsorption and decomposition of h2s on ge 001 an stm study |
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