The adsorption and decomposition of H2S on Ge(001): An STM study
The preparation of a nominal half-monolayer of sulphur on the Ge(001) surface via the adsorption of H2S and subsequent annealing has been monitored by STM. The 'saturated adsorption' surface image of dark-bright pairs is consistent with the dissociative adsorption of H and HS, respectively...
| Հիմնական հեղինակներ: | , , , |
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| Ձևաչափ: | Journal article |
| Լեզու: | English |
| Հրապարակվել է: |
2009
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