Modelling the upper yield point and the brittle-ductile transition of silicon wafers in three-point bend tests

Three-point bend tests carried out by Folk [R.H. Folk, The brittle to ductile transition in silicon: evidence of a criticaly yield event. PhD thesis, University of Pennsylvania (2000).] on initially dislocation-free specimens of semiconductor-grade single crystals of Si showed that, for a given stra...

Полное описание

Библиографические подробности
Главные авторы: Roberts, S, Hirsch, P
Формат: Journal article
Язык:English
Опубликовано: 2006