SiNx and AlOx nanolayers in hole selective passivating contacts for high efficiency silicon solar cells

The recombination of photogenerated charge carriers at metal-semiconductor interfaces remains a major source of efficiency loss in photovoltaic cells. Here, we present SiN x and AlO x nanolayers as promising interface dielectrics to enable high efficiency hole selective passivating contacts. It is d...

Deskribapen osoa

Xehetasun bibliografikoak
Egile Nagusiak: McNab, S, Niu, X, Khorani, E, Wratten, A, Morisset, A, Grant, NE, Murphy, JD, Altermatt, PP, Wright, M, Wilshaw, PR, Bonilla, RS
Formatua: Journal article
Hizkuntza:English
Argitaratua: IEEE 2022

Antzeko izenburuak