SiNx and AlOx nanolayers in hole selective passivating contacts for high efficiency silicon solar cells

The recombination of photogenerated charge carriers at metal-semiconductor interfaces remains a major source of efficiency loss in photovoltaic cells. Here, we present SiN x and AlO x nanolayers as promising interface dielectrics to enable high efficiency hole selective passivating contacts. It is d...

詳細記述

書誌詳細
主要な著者: McNab, S, Niu, X, Khorani, E, Wratten, A, Morisset, A, Grant, NE, Murphy, JD, Altermatt, PP, Wright, M, Wilshaw, PR, Bonilla, RS
フォーマット: Journal article
言語:English
出版事項: IEEE 2022