High resolution deep level transient spectroscopy applied to extended defects in silicon
Deep level transient spectroscopy (DLTS) and high resolution Laplace DLTS (LDLTS) have been applied to p-type Czochralski silicon that contains dislocations that have and that have not been locked by oxygen. The stress-induced dislocations have been immobilized by oxygen during heat treatment, which...
| Main Authors: | , , , , |
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| Format: | Conference item |
| Published: |
2005
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