Strain and defect microstructure in ion-irradiated GeSi/Si strained layers as a function of annealing temperature

Strain and defect microstructure in ion-irradiated GeSi/Si strained layers as a function of annealing temperature

التفاصيل البيبلوغرافية
المؤلفون الرئيسيون:	Glasko, J, Elliman, R, Zou, J, Cockayne, D, Gerald, F
التنسيق:	Journal article
منشور في:	1998

مواد مشابهة

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