Strain and defect microstructure in ion-irradiated GeSi/Si strained layers as a function of annealing temperature

Strain and defect microstructure in ion-irradiated GeSi/Si strained layers as a function of annealing temperature

Manylion Llyfryddiaeth
Prif Awduron:	Glasko, J, Elliman, R, Zou, J, Cockayne, D, Gerald, F
Fformat:	Journal article
Cyhoeddwyd:	1998

Eitemau Tebyg

Ion irradiation of GeSi Si strained-layer heterostructures
gan: Glasko, J, et al.
Cyhoeddwyd: (1999)

The effect of irradiation temperature on post-irradiation strain levels in GexSi1-x/Si strained layer heterostructures
gan: Glasko, J, et al.
Cyhoeddwyd: (1996)

The effect of ion-implantation induced defects on strain relaxation in GexSi1-x/Si heterostructures
gan: Glasko, J, et al.
Cyhoeddwyd: (1997)

GeSi strained layers and their applications /
gan: Stoneham, A. M., et al.
Cyhoeddwyd: (1995)

Ge and GeSi electroabsorption modulator arrays via strain and composition engineering
gan: Ma, Danhao.
Cyhoeddwyd: (2021)

GeSi quantum dots: the effect of alloying on the shape transformation
gan: Lang, C, et al.
Cyhoeddwyd: (2003)

Real time observation of GeSi/Si(001) island shrinkage due to surface alloying during Si capping.
gan: Lang, C, et al.
Cyhoeddwyd: (2006)

Design of Ge/GeSi quantum well infrared photodetector
gan: Xu, Yifei
Cyhoeddwyd: (2016)

Annealing effects on the microstructure of Ge/Si(001) quantum dots
gan: Liao, X, et al.
Cyhoeddwyd: (2001)

Tilt boundary formation in GeSi/Si (001) vicinal heterosystem
gan: Aleksei V. Kolesnikov, et al.
Cyhoeddwyd: (2015-03-01)

Ordered GeSi nanorings grown on patterned Si (001) substrates
gan: Ma Yingjie, et al.
Cyhoeddwyd: (2011-01-01)

Recent progress in GeSi electro-absorption modulators
gan: Papichaya Chaisakul, et al.
Cyhoeddwyd: (2014-01-01)

Tensile-strain and doping enhanced direct bandgap optical transition of n+ doped Ge/GeSi quantum wells
gan: Fan, Weijun
Cyhoeddwyd: (2014)

First principles study of GeSi exchange mechanisms at the Si(001) surface
gan: Zipoli, F, et al.
Cyhoeddwyd: (2008)

Bandgap atomistic calculations on hydrogen-passivated GeSi nanocrystals
gan: Ovidiu Cojocaru, et al.
Cyhoeddwyd: (2021-06-01)

GeSi photodetectors and electro-absorption modulators for Si electronic-photonic integrated circuits
gan: Liu, Jifeng, Ph. D. Massachusetts Institute of Technology
Cyhoeddwyd: (2008)

Experimental Analyses on Multiscale Structural and Mechanical Properties of ε-Si/GeSi/C-Si Materials
gan: Wei Qiu, et al.
Cyhoeddwyd: (2018-11-01)

Strong Electro-Absorption in GeSi Epitaxy on Silicon-on-Insulator (SOI)
gan: John E. Cunningham, et al.
Cyhoeddwyd: (2012-04-01)

Collective Modes in the Luminescent Response of Si Nanodisk Chains with Embedded GeSi Quantum Dots
gan: Vladimir A. Zinovyev, et al.
Cyhoeddwyd: (2023-11-01)

Theoretical Study on the High HER/OER Electrocatalytic Activities of 2D GeSi, SnSi, and SnGe Monolayers and Further Improvement by Imposing Biaxial Strain or Doping Heteroatoms
gan: Cuimei Li, et al.
Cyhoeddwyd: (2022-08-01)

SiGe-on-insulator and strained-Si-on-insulator for strained-Si CMOS and nanocrystalline-Ge waveguides
gan: Taraschi, Gianni, 1973-
Cyhoeddwyd: (2005)

Strain relaxation by alloying effects in Ge islands grown on Si(001)
gan: Liao, X, et al.
Cyhoeddwyd: (1999)

A promising routine to fabricate GeSi nanowires via self-assembly on miscut Si (001) substrates
gan: Zhong Zhenyang, et al.
Cyhoeddwyd: (2011-01-01)

Strain relaxation in SiGe/Si heteroepitaxy
gan: Wong, Lydia Helena
Cyhoeddwyd: (2010)

Optimizing SiGe–SiO2 Visible–Short‐Wave Infrared Photoresponse by Modulating Interplay Between Strain and Defects Through Annealing
gan: Muhammad Taha Sultan, et al.
Cyhoeddwyd: (2024-08-01)

MOSFET channel engineering using strained Si and strained Ge grown on SiGe virtual substrates
gan: Lee, Minjoo Lawrence, 1976-
Cyhoeddwyd: (2005)

Dramatically enhanced self-assembly of GeSi quantum dots with superior photoluminescence induced by the substrate misorientation
gan: Tong Zhou, et al.
Cyhoeddwyd: (2014-02-01)

MOSFET Channel Engineering using Strained Si, SiGe, and Ge Channels
gan: Fitzgerald, Eugene A., et al.
Cyhoeddwyd: (2003)

Transport in thin-body MOSFETs fabricated in strained Si and strained Si/SiGe heterostructures on insulator
gan: Åberg, Ingvar
Cyhoeddwyd: (2007)

GeSi Nanocrystals Photo-Sensors for Optical Detection of Slippery Road Conditions Combining Two Classification Algorithms
gan: Catalin Palade, et al.
Cyhoeddwyd: (2020-11-01)

Stress and relief of misfit strain of Ge/Si(001)
gan: Wedler, G, et al.
Cyhoeddwyd: (1998)

SiGe and Si strained-layer epitaxy for silicon heterostructure devices /
gan: Cressler, John D.
Cyhoeddwyd: (2008)

Nanoscale strained-Si/SiGe and double-gate MOSFET modeling
gan: Karthik Chandrasekaran
Cyhoeddwyd: (2010)

Stress and relief of misfit strain of Ge/Si(111)
gan: Walz, J, et al.
Cyhoeddwyd: (1998)

In0.3Ga0.7As heterojunction bipolar transistor grown on GeSi substrate for high-frequency application
gan: Loke, Wan Khai, et al.
Cyhoeddwyd: (2022)

Transmission electron microscopy characterization of secondary defects created by MeV Si, Ge, and Sn implantation in silicon
gan: Wong-Leung, J, et al.
Cyhoeddwyd: (2000)

Strain evolution of SiGe-on-insulator obtained by the Ge-condensation technique
gan: Victor Boureau, et al.
Cyhoeddwyd: (2019-04-01)

Epitaxial growth of SiGe films by annealing Al–Ge alloyed pastes on Si substrate
gan: Keisuke Fukuda, et al.
Cyhoeddwyd: (2022-09-01)

Elastically strained GeSiSn layers and GeSiSn islands in multilayered periodical structures
gan: Vyacheslav A. Timofeev, et al.
Cyhoeddwyd: (2017-06-01)

High energy swift heavy ion irradiation and annealing effects on DC electrical characteristics of 200 GHz SiGe HBTs
gan: Vinayakprasanna N. Hegde, et al.
Cyhoeddwyd: (2019-08-01)