Strain and defect microstructure in ion-irradiated GeSi/Si strained layers as a function of annealing temperature

Strain and defect microstructure in ion-irradiated GeSi/Si strained layers as a function of annealing temperature

Библиографические подробности
Главные авторы:	Glasko, J, Elliman, R, Zou, J, Cockayne, D, Gerald, F
Формат:	Journal article
Опубликовано:	1998

Схожие документы

Ion irradiation of GeSi Si strained-layer heterostructures
по: Glasko, J, и др.
Опубликовано: (1999)

The effect of irradiation temperature on post-irradiation strain levels in GexSi1-x/Si strained layer heterostructures
по: Glasko, J, и др.
Опубликовано: (1996)

The effect of ion-implantation induced defects on strain relaxation in GexSi1-x/Si heterostructures
по: Glasko, J, и др.
Опубликовано: (1997)

GeSi strained layers and their applications /
по: Stoneham, A. M., и др.
Опубликовано: (1995)

Ge and GeSi electroabsorption modulator arrays via strain and composition engineering
по: Ma, Danhao.
Опубликовано: (2021)

GeSi quantum dots: the effect of alloying on the shape transformation
по: Lang, C, и др.
Опубликовано: (2003)

Real time observation of GeSi/Si(001) island shrinkage due to surface alloying during Si capping.
по: Lang, C, и др.
Опубликовано: (2006)

Design of Ge/GeSi quantum well infrared photodetector
по: Xu, Yifei
Опубликовано: (2016)

Annealing effects on the microstructure of Ge/Si(001) quantum dots
по: Liao, X, и др.
Опубликовано: (2001)

Tilt boundary formation in GeSi/Si (001) vicinal heterosystem
по: Aleksei V. Kolesnikov, и др.
Опубликовано: (2015-03-01)

Ordered GeSi nanorings grown on patterned Si (001) substrates
по: Ma Yingjie, и др.
Опубликовано: (2011-01-01)

Recent progress in GeSi electro-absorption modulators
по: Papichaya Chaisakul, и др.
Опубликовано: (2014-01-01)

Tensile-strain and doping enhanced direct bandgap optical transition of n+ doped Ge/GeSi quantum wells
по: Fan, Weijun
Опубликовано: (2014)

First principles study of GeSi exchange mechanisms at the Si(001) surface
по: Zipoli, F, и др.
Опубликовано: (2008)

Bandgap atomistic calculations on hydrogen-passivated GeSi nanocrystals
по: Ovidiu Cojocaru, и др.
Опубликовано: (2021-06-01)

GeSi photodetectors and electro-absorption modulators for Si electronic-photonic integrated circuits
по: Liu, Jifeng, Ph. D. Massachusetts Institute of Technology
Опубликовано: (2008)

Experimental Analyses on Multiscale Structural and Mechanical Properties of ε-Si/GeSi/C-Si Materials
по: Wei Qiu, и др.
Опубликовано: (2018-11-01)

Strong Electro-Absorption in GeSi Epitaxy on Silicon-on-Insulator (SOI)
по: John E. Cunningham, и др.
Опубликовано: (2012-04-01)

Collective Modes in the Luminescent Response of Si Nanodisk Chains with Embedded GeSi Quantum Dots
по: Vladimir A. Zinovyev, и др.
Опубликовано: (2023-11-01)

Theoretical Study on the High HER/OER Electrocatalytic Activities of 2D GeSi, SnSi, and SnGe Monolayers and Further Improvement by Imposing Biaxial Strain or Doping Heteroatoms
по: Cuimei Li, и др.
Опубликовано: (2022-08-01)

SiGe-on-insulator and strained-Si-on-insulator for strained-Si CMOS and nanocrystalline-Ge waveguides
по: Taraschi, Gianni, 1973-
Опубликовано: (2005)

Strain relaxation by alloying effects in Ge islands grown on Si(001)
по: Liao, X, и др.
Опубликовано: (1999)

A promising routine to fabricate GeSi nanowires via self-assembly on miscut Si (001) substrates
по: Zhong Zhenyang, и др.
Опубликовано: (2011-01-01)

Strain relaxation in SiGe/Si heteroepitaxy
по: Wong, Lydia Helena
Опубликовано: (2010)

Optimizing SiGe–SiO2 Visible–Short‐Wave Infrared Photoresponse by Modulating Interplay Between Strain and Defects Through Annealing
по: Muhammad Taha Sultan, и др.
Опубликовано: (2024-08-01)

MOSFET channel engineering using strained Si and strained Ge grown on SiGe virtual substrates
по: Lee, Minjoo Lawrence, 1976-
Опубликовано: (2005)

Dramatically enhanced self-assembly of GeSi quantum dots with superior photoluminescence induced by the substrate misorientation
по: Tong Zhou, и др.
Опубликовано: (2014-02-01)

MOSFET Channel Engineering using Strained Si, SiGe, and Ge Channels
по: Fitzgerald, Eugene A., и др.
Опубликовано: (2003)

Transport in thin-body MOSFETs fabricated in strained Si and strained Si/SiGe heterostructures on insulator
по: Åberg, Ingvar
Опубликовано: (2007)

GeSi Nanocrystals Photo-Sensors for Optical Detection of Slippery Road Conditions Combining Two Classification Algorithms
по: Catalin Palade, и др.
Опубликовано: (2020-11-01)

Stress and relief of misfit strain of Ge/Si(001)
по: Wedler, G, и др.
Опубликовано: (1998)

SiGe and Si strained-layer epitaxy for silicon heterostructure devices /
по: Cressler, John D.
Опубликовано: (2008)

Nanoscale strained-Si/SiGe and double-gate MOSFET modeling
по: Karthik Chandrasekaran
Опубликовано: (2010)

Stress and relief of misfit strain of Ge/Si(111)
по: Walz, J, и др.
Опубликовано: (1998)

In0.3Ga0.7As heterojunction bipolar transistor grown on GeSi substrate for high-frequency application
по: Loke, Wan Khai, и др.
Опубликовано: (2022)

Transmission electron microscopy characterization of secondary defects created by MeV Si, Ge, and Sn implantation in silicon
по: Wong-Leung, J, и др.
Опубликовано: (2000)

Strain evolution of SiGe-on-insulator obtained by the Ge-condensation technique
по: Victor Boureau, и др.
Опубликовано: (2019-04-01)

Epitaxial growth of SiGe films by annealing Al–Ge alloyed pastes on Si substrate
по: Keisuke Fukuda, и др.
Опубликовано: (2022-09-01)

Elastically strained GeSiSn layers and GeSiSn islands in multilayered periodical structures
по: Vyacheslav A. Timofeev, и др.
Опубликовано: (2017-06-01)

High energy swift heavy ion irradiation and annealing effects on DC electrical characteristics of 200 GHz SiGe HBTs
по: Vinayakprasanna N. Hegde, и др.
Опубликовано: (2019-08-01)