Strain and defect microstructure in ion-irradiated GeSi/Si strained layers as a function of annealing temperature

Παρόμοια τεκμήρια

• Ion irradiation of GeSi Si strained-layer heterostructures
  ανά: Glasko, J, κ.ά.
  Έκδοση: (1999)
• The effect of irradiation temperature on post-irradiation strain levels in GexSi1-x/Si strained layer heterostructures
  ανά: Glasko, J, κ.ά.
  Έκδοση: (1996)
• The effect of ion-implantation induced defects on strain relaxation in GexSi1-x/Si heterostructures
  ανά: Glasko, J, κ.ά.
  Έκδοση: (1997)
• GeSi strained layers and their applications /
  ανά: Stoneham, A. M., κ.ά.
  Έκδοση: (1995)
• Ge and GeSi electroabsorption modulator arrays via strain and composition engineering
  ανά: Ma, Danhao.
  Έκδοση: (2021)