GETTERING OF COPPER IN SILICON - PRECIPITATION AT EXTENDED SURFACE-DEFECTS

GETTERING OF COPPER IN SILICON - PRECIPITATION AT EXTENDED SURFACE-DEFECTS

عرض إصدارات أخرى (1)

Selected results from a TEM study of copper precipitation at extended surface defects in silicon are reported. The relative getting effectiveness of surface pits, oxidation induced stacking faults, and their bounding partials is compared. Copper-silicide precipitate colonies on {111} planes are obse...

وصف كامل

التفاصيل البيبلوغرافية
المؤلفون الرئيسيون:	Decoteau, M, Wilshaw, P, Falster, R
التنسيق:	Journal article
اللغة:	English
منشور في:	Publ by Inst of Physics Publ Ltd 1991

مواد مشابهة

GETTERING OF COPPER IN SILICON - PRECIPITATION AT EXTENDED SURFACE-DEFECTS
حسب: Decoteau, M, وآخرون
منشور في: (1991)

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