GETTERING OF COPPER IN SILICON - PRECIPITATION AT EXTENDED SURFACE-DEFECTS

GETTERING OF COPPER IN SILICON - PRECIPITATION AT EXTENDED SURFACE-DEFECTS

Показать другие версии (1)

Selected results from a TEM study of copper precipitation at extended surface defects in silicon are reported. The relative getting effectiveness of surface pits, oxidation induced stacking faults, and their bounding partials is compared. Copper-silicide precipitate colonies on {111} planes are obse...

Полное описание

Библиографические подробности
Главные авторы:	Decoteau, M, Wilshaw, P, Falster, R
Формат:	Journal article
Язык:	English
Опубликовано:	Publ by Inst of Physics Publ Ltd 1991

Схожие документы

GETTERING OF COPPER IN SILICON - PRECIPITATION AT EXTENDED SURFACE-DEFECTS
по: Decoteau, M, и др.
Опубликовано: (1991)

GETTERING OF COPPER AND IRON TO EXTENDED SURFACE-DEFECTS IN SILICON
по: Decoteau, M, и др.
Опубликовано: (1992)

PRECIPITATION OF IRON IN SILICON - GETTERING TO EXTENDED SURFACE DEFECT SITES
по: Decoteau, M, и др.
Опубликовано: (1991)

GETTERING OF COPPER TO OXIDATION INDUCED STACKING-FAULTS IN SILICON
по: Decoteau, M, и др.
Опубликовано: (1990)

GETTERING IN SILICON
по: Falster, R
Опубликовано: (1989)

Cathodoluminescence assessment of low temperature gettering in silicon and a novel technique for estimating bulk minority carrier lifetime in silicon
по: Fraser, K, и др.
Опубликовано: (2008)

Efficient, room-temperature, near-band gap luminescence by gettering in ion implanted silicon
по: Stowe, D, и др.
Опубликовано: (2005)

Getters in silicon
по: Vyacheslav A. Kharchenko
Опубликовано: (2019-03-01)

Oxygen precipitate studies in silicon for gettering in solar cell applications
по: Salomon, Ashley
Опубликовано: (2018)

ELECTRON-BEAM-INDUCED ACTIVITY OF DEFECTS IN SILICON
по: Wilshaw, P, и др.
Опубликовано: (1994)

Gettering defects in semiconductors /
по: 386064 Perevostchikov V. A., и др.
Опубликовано: (2005)

Atom probe Tomography of fast-diffusing impurities and the effect of gettering in multicrystalline silicon
по: Tweddle, D, и др.
Опубликовано: (2018)

Onset of slip in silicon containing oxide precipitates
по: Jurkschat, K, и др.
Опубликовано: (2001)

High-Performance and Traditional Multicrystalline Silicon: Comparing Gettering Responses and Lifetime-Limiting Defects
по: Ekstrom, Kai E., и др.
Опубликовано: (2018)

Exceptional gettering response of epitaxially grown kerfless silicon
по: Markevich, V. P., и др.
Опубликовано: (2018)

EBIC INVESTIGATIONS OF DISLOCATIONS AND THEIR INTERACTIONS WITH IMPURITIES IN SILICON
по: Fell, T, и др.
Опубликовано: (1993)

Detecting and gettering chromium impurities in photovoltaic crystalline silicon
по: Jensen, Mallory Ann
Опубликовано: (2015)

Saw damage gettering for industrially relevant mc‐Si feedstock
по: Shaw, E, и др.
Опубликовано: (2017)

Simulation of iron impurity gettering in crystalline silicon solar cells
по: Powell, Douglas M. (Douglas Michael)
Опубликовано: (2012)

Porous silicon and aluminum co-gettering experiment in p-type multicrystalline silicon substrate
по: P.N. Vinod
Опубликовано: (2007-01-01)

Improvement of charge carrier lifetime in heat exchange method multicrystalline silicon wafers by extended phosphorous gettering process
по: D. Bouhafs, и др.
Опубликовано: (2011-12-01)

Methods and mechanisms of gettering of silicon structures in the production of integrated circuits
по: Pilipenko V. A., и др.
Опубликовано: (2013-05-01)

Electron beam induced current investigations of transition metal impurities at extended defects in silicon
по: Wilshaw, P, и др.
Опубликовано: (1995)

Effects of Phosphorus Diffusion on Gettering of Metal Impurities in UMG Silicon Wafers
по: Sung Yean Yoon, и др.
Опубликовано: (2013-01-01)

The Physical mechanisms of gettering properties of nickel clusters in silicon solar cells
по: Zoir Kenzhaev, и др.
Опубликовано: (2024-06-01)

DLTS characterization of aluminum gettering of iron contaminants in boron-doped silicon
по: Thienprasit, Jeanne A. (Jeanne Athya)
Опубликовано: (2005)

Cathodoluminescence assessment of annealed silicon and a novel technique for estimating minority carrier lifetime in silicon
по: Fraser, K, и др.
Опубликовано: (2009)

Regularities of microdefect formation in silicon during heat treatment for internal getter synthesis
по: Vladimir T. Bublik, и др.
Опубликовано: (2019-09-01)

Transition metal gettering studies and simulation for the optimization of silicon photovoltaic device processing
по: Smith, Aimée Louise, 1971-
Опубликовано: (2005)

Evaluation of Hydrogen Gettering Rates Correlated to Surface Composition and Texture of Nickel-Plated Zircaloy Getters of Different Heat Treatment Procedures
по: Ewa C. E. Rönnebro, и др.
Опубликовано: (2023-01-01)

Effective lifetimes exceeding 300 μs in gettered p-type epitaxial kerfless silicon for photovoltaics
по: Powell, D. M., и др.
Опубликовано: (2015)

The segregation behaviour of oxygen at dislocations in silicon
по: Senkader, S, и др.
Опубликовано: (1999)

Locking of dislocations by oxygen in Cz-silicon
по: Senkader, S, и др.
Опубликовано: (1999)

Finite- vs. infinite-source emitters in silicon photovoltaics: Effect on transition metal gettering
по: Vahanissi, Ville, и др.
Опубликовано: (2018)

High resolution deep level transient spectroscopy applied to extended defects in silicon
по: Evans-Freeman, J, и др.
Опубликовано: (2005)

Recombination at oxide precipitates in silicon
по: Murphy, J, и др.
Опубликовано: (2011)

Generation of dislocation glide loops in Czochralski silicon
по: Giannattasio, A, и др.
Опубликовано: (2002)

Dislocation locking by nitrogen impurities in FZ-silicon
по: Giannattasio, A, и др.
Опубликовано: (2003)

On the mechanism of recombination at oxide precipitates in silicon
по: Murphy, J, и др.
Опубликовано: (2013)

Oxygen-dislocation interactions in silicon at temperatures below 700 degrees C: Dislocation locking and oxygen diffusion
по: Senkader, S, и др.
Опубликовано: (2001)