A dissociation mechanism for the [a plus c] dislocation in GaN
Mixed-type [a+c] dislocations can be identified in atomic-resolution high-angle annular dark-field scanning transmission electron microscope images of GaN viewed along [0001] by use of a Burgers loop analysis and by observation of the depth-dependent displacements associated with the Eshelby twist....
Hlavní autoři: | Nellist, P, Hirsch, P, Rhode, S, Horton, M, Lozano, J, Yasuhara, A, Okunishi, E, Zhang, S, Sahonta, S, Kappers, M, Humphreys, C, Moram, M |
---|---|
Médium: | Conference item |
Vydáno: |
Institute of Physics Publishing
2014
|
Podobné jednotky
-
The dissociation of the [a plus c] dislocation in GaN
Autor: Hirsch, P, a další
Vydáno: (2013) -
Observation of depth-dependent atomic displacements related to dislocations in GaN by optical sectioning in the STEM
Autor: Lozano, J, a další
Vydáno: (2014) -
Growth modes in heteroepitaxy of InGaN on GaN
Autor: Oliver, R, a další
Vydáno: (2005) -
The influence of ammonia on the growth mode in InGaN/GaN heteroepitaxy
Autor: Oliver, R, a další
Vydáno: (2004) -
Direct observation of the core structures of threading dislocations in GaN
Autor: Xin, Y, a další
Vydáno: (1998)