Dynamics and gain in highly-excited InGaN MQWs

Dynamics and gain in highly-excited InGaN MQWs

他のバージョン（1件）を表示する

The Kerr gate technique is used to time-resolve the gain in an In0.02Ga0.98N/In0.16Ga0.84N multiple quantum well sample. A new way of analyzing the data in such a variable stripe length method gain experiment is used to analyze both the time-integrated and time-resolved spectra. We confirm that the...

書誌詳細
主要な著者:	Taylor, R, Kyhm, K, Smith, J, Rice, J, Ryan, J, Someya, T, Arakawa, Y
フォーマット:	Journal article
言語:	English
出版事項:	2002

類似資料

Dynamics and gain in highly-excited InGaN MQWs
著者:: Taylor, R, 等
出版事項: (2002)

Time-resolved gain dynamics in InGaN MQWs using a Kerr gate
著者:: Taylor, R, 等
出版事項: (2003)

Time-resolved gain dynamics in InGaN MQWs using a Kerr gate
著者:: Taylor, R, 等
出版事項: (2003)

Time-resolved gain saturation dynamics in InGaN multi-quantum well structures
著者:: Kyhm, K, 等
出版事項: (2004)

Time-resolved gain saturation dynamics in InGaN multi-quantum well structures
著者:: Kyhm, K, 等
出版事項: (2004)

Time-resolved gain dynamics in InGaN MQW structures
著者:: Kyhm, K, 等
出版事項: (2005)

Characterization and fabrication of InGaN/GaN MQWs and LEDs on macroporous Si substrate
著者:: Dang, Dominic Thor Weng
出版事項: (2011)

Efficiency enhancement of InGaN amber MQWs using nanopillar structures
著者:: Ou Yiyu, 等
出版事項: (2018-01-01)

Saturation of gain in In0.02Ga0.98N/In0.16Ga0.84N MQW plasmas
著者:: Kyhm, K, 等
出版事項: (2002)

Saturation of gain in In0.02Ga0.98N/In0.16Ga0.84N MQW plasmas
著者:: Kyhm, K, 等
出版事項: (2002)

Analysis of gain saturation in In0.02Ga0.98N/In0.16Ga0.84N multiple quantum wells
著者:: Kyhm, K, 等
出版事項: (2001)

Analysis of gain saturation in In0.02Ga0.98N/In0.16Ga0.84N multiple quantum wells
著者:: Kyhm, K, 等
出版事項: (2001)

Identification of the Kirkendall effect as a mechanism responsible for thermal decomposition of the InGaN/GaN MQWs system
著者:: Roman Hrytsak, 等
出版事項: (2022-01-01)

Dynamics of single InGaN quantum dots
著者:: Taylor, R, 等
出版事項: (2004)

Dynamics of localized carriers in InGaN multi-quantum wells
著者:: Kyhm, K, 等
出版事項: (2006)

Mechanism of V‑Shaped Pits on Promoting Hole Injection in the InGaN MQWs: First-Principles Investigation
著者:: Qingqing Feng, 等
出版事項: (2024-01-01)

Time-resolved dynamics in single InGaN quantum dots
著者:: Robinson, J, 等
出版事項: (2003)

Biexciton and exciton dynamics in single InGaN quantum dots
著者:: Rice, J, 等
出版事項: (2005)

Time-resolved photoluminescence from hot two-dimensional carriers in GaAsGaAlAs MQWS
著者:: Ryan, J, 等
出版事項: (1986)

Fabrication of High Efficiency Green InGaN/GaN MicroLEDs by Modulating Potential Barrier Height of the Sidewall MQWs in V-Pits
著者:: Hsin-Yu Liu, 等
出版事項: (2024-01-01)

Excitation and temperature dependence of the broad gain spectrum in GaAs/AlGaAs quantum rings
著者:: Jang, J, 等
出版事項: (2020)

Time-resolved dynamics in single InGaN quantum dots
著者:: Taylor, R, 等
出版事項: (2005)

Luminescence properties of isolated InGaN/GaN quantum dots
著者:: Martin, R, 等
出版事項: (2005)

Three-photon excitation of InGaN quantum dots
著者:: Villafane, V, 等
出版事項: (2023)

Optical Gain and Laser Characteristics of InGaN Quantum Wells on Ternary InGaN Substrates
著者:: Jing Zhang, 等
出版事項: (2013-01-01)

Time-integrated and time-resolved photoluminescence studies of InGaN quantum dots
著者:: Robinson, J, 等
出版事項: (2004)

Femtosecond exciton dynamics and the Mott transition in GaN under resonant excitation
著者:: Hess, S, 等
出版事項: (1999)

Femtosecond exciton dynamics and the mott transition in GaN under resonant excitation
著者:: Hess, S, 等
出版事項: (1999)

Advantages of InGaN–GaN–InGaN Delta Barriers for InGaN-Based Laser Diodes
著者:: Liwen Cheng, 等
出版事項: (2021-08-01)

Quantum dot emission from site-controlled InGaN/GaN micropyramid arrays
著者:: Edwards, P, 等
出版事項: (2004)

Gain characteristics of InGaN quantum wells with AlGaInN barriers
著者:: Hanlin Fu, 等
出版事項: (2019-04-01)

Non-equilibrium carrier dynamics and many body effects in highly excited GaN
著者:: Kyhm, K, 等
出版事項: (2011)

Carrier Dynamics in InGaN/GaN-Based Green LED under Different Excitation Sources
著者:: Jianfei Li, 等
出版事項: (2021-09-01)

Growth of InGaN quantum dots on GaN by MOVPE, employing a growth temperature nitrogen anneal
著者:: Oliver, R, 等
出版事項: (2003)

Quantum dot emission from selectively-grown InGaN/GaN micropyramid arrays
著者:: Taylor, R, 等
出版事項: (2005)

Non-linear excitation and correlation studies of single InGaN quantum dots
著者:: Collins, D, 等
出版事項: (2009)

Non-linear excitation and correlation studies of single InGaN quantum dots
著者:: Collins, D, 等
出版事項: (2009)

Thermoelectric properties of In-rich InGaN and InN/InGaN superlattices
著者:: James (Zi-Jian) Ju, 等
出版事項: (2016-04-01)

On the mechanisms of InGaN electron cooler in InGaN/GaN light-emitting diodes
著者:: Zhang, Xueliang, 等
出版事項: (2014)

Stimulated emission and excitonic bleaching in GaN epilayers under high-density excitation
著者:: Taylor, R, 等
出版事項: (1999)