Atom probe tomography analysis of near surface, low concentration impurities in single crystal silicon
<p>Advances in semiconductor device manufacture have led to modern nanoelectronic devices incorporating features with dimensions less than ten nanometres, fabricated within tens of nanometres of silicon substrate surfaces. To refine materials processing and optimise the correlation between fab...
| Main Author: | |
|---|---|
| Other Authors: | |
| Format: | Thesis |
| Language: | English |
| Published: |
2017
|
| Subjects: |