Parameterisation of injection-dependent lifetime measurements in semiconductors in terms of Shockley-Read-Hall statistics: An application to oxide precipitates in silicon
Injection-dependent minority carrier lifetime measurements are a valuable characterisation method for semiconductor materials, particularly those for photovoltaic applications. For a sample containing defects which obey Shockley-Read-Hall statistics, it is possible to use such measurements to determ...
| Main Authors: | , , , , |
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| Format: | Conference item |
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2012
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