Electronic comparison of InAs wurtzite and zincblende phases using nanowire transistors
We compare the electronic characteristics of nanowire field-effect transistors made using single pure wurtzite and pure zincblende InAs nanowires grown from identical catalyst particles. We compare the transfer characteristics and field-effect mobility versus temperature for these devices to better...
| Autors principals: | , , , , , , |
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| Format: | Journal article |
| Idioma: | English |
| Publicat: |
2013
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