Electronic comparison of InAs wurtzite and zincblende phases using nanowire transistors
We compare the electronic characteristics of nanowire field-effect transistors made using single pure wurtzite and pure zincblende InAs nanowires grown from identical catalyst particles. We compare the transfer characteristics and field-effect mobility versus temperature for these devices to better...
| Hoofdauteurs: | , , , , , , |
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| Formaat: | Journal article |
| Taal: | English |
| Gepubliceerd in: |
2013
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| _version_ | 1826295326965760000 |
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| author | Ullah, A Joyce, H Burke, A Wong-Leung, J Tan, H Jagadish, C Micolich, A |
| author_facet | Ullah, A Joyce, H Burke, A Wong-Leung, J Tan, H Jagadish, C Micolich, A |
| author_sort | Ullah, A |
| collection | OXFORD |
| description | We compare the electronic characteristics of nanowire field-effect transistors made using single pure wurtzite and pure zincblende InAs nanowires grown from identical catalyst particles. We compare the transfer characteristics and field-effect mobility versus temperature for these devices to better understand how differences in InAs phase govern the electronic properties of nanowire transistors. © 2013 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim. |
| first_indexed | 2024-03-07T03:59:19Z |
| format | Journal article |
| id | oxford-uuid:c3fbdab2-e755-40e8-b4f4-3136473823cf |
| institution | University of Oxford |
| language | English |
| last_indexed | 2024-03-07T03:59:19Z |
| publishDate | 2013 |
| record_format | dspace |
| spelling | oxford-uuid:c3fbdab2-e755-40e8-b4f4-3136473823cf2022-03-27T06:20:18ZElectronic comparison of InAs wurtzite and zincblende phases using nanowire transistorsJournal articlehttp://purl.org/coar/resource_type/c_dcae04bcuuid:c3fbdab2-e755-40e8-b4f4-3136473823cfEnglishSymplectic Elements at Oxford2013Ullah, AJoyce, HBurke, AWong-Leung, JTan, HJagadish, CMicolich, AWe compare the electronic characteristics of nanowire field-effect transistors made using single pure wurtzite and pure zincblende InAs nanowires grown from identical catalyst particles. We compare the transfer characteristics and field-effect mobility versus temperature for these devices to better understand how differences in InAs phase govern the electronic properties of nanowire transistors. © 2013 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim. |
| spellingShingle | Ullah, A Joyce, H Burke, A Wong-Leung, J Tan, H Jagadish, C Micolich, A Electronic comparison of InAs wurtzite and zincblende phases using nanowire transistors |
| title | Electronic comparison of InAs wurtzite and zincblende phases using nanowire transistors |
| title_full | Electronic comparison of InAs wurtzite and zincblende phases using nanowire transistors |
| title_fullStr | Electronic comparison of InAs wurtzite and zincblende phases using nanowire transistors |
| title_full_unstemmed | Electronic comparison of InAs wurtzite and zincblende phases using nanowire transistors |
| title_short | Electronic comparison of InAs wurtzite and zincblende phases using nanowire transistors |
| title_sort | electronic comparison of inas wurtzite and zincblende phases using nanowire transistors |
| work_keys_str_mv | AT ullaha electroniccomparisonofinaswurtziteandzincblendephasesusingnanowiretransistors AT joyceh electroniccomparisonofinaswurtziteandzincblendephasesusingnanowiretransistors AT burkea electroniccomparisonofinaswurtziteandzincblendephasesusingnanowiretransistors AT wongleungj electroniccomparisonofinaswurtziteandzincblendephasesusingnanowiretransistors AT tanh electroniccomparisonofinaswurtziteandzincblendephasesusingnanowiretransistors AT jagadishc electroniccomparisonofinaswurtziteandzincblendephasesusingnanowiretransistors AT micolicha electroniccomparisonofinaswurtziteandzincblendephasesusingnanowiretransistors |