Recombination-enhanced diffusion of self-interstitial atoms and vacancy-interstitial recombination in diamond
In this paper we report the results of EPR and optical studies on vacancies and interstitials produced in type IIa diamond irradiated with 2-MeV electrons at temperatures between 90 and 900 K. Post-irradiation annealing studies at temperatures up to 1900 K were also performed. Data showing recombina...
| المؤلفون الرئيسيون: | , , , , |
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| التنسيق: | Conference item |
| منشور في: |
2002
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