Band gap engineering of In2O3 by alloying with Tl2O3

Efficient modulation of the bandgap of In2O3 will open up a route to improved electronic properties. We demonstrate using ab initio calculations that Tl incorporation into In2O3 reduces the band gap and confirm that narrowing of the gap is observed by X-ray photoemission spectroscopy on ceramic surf...

Full description

Bibliographic Details
Main Authors: Scanlon, DO, Regoutz, A, Egdell, R, Morgan, D, Watson, G
Format: Journal article
Language:English
Published: 2013