Transmission electron microscopy investigation of semiconductor quantum dots
Transmission electron microscopy was used to study InGaAs/GaAs and Ge(Si)/Si quantum dots. Results on the detailed microstructural investigation using plan-view [001] zone-axis bright-field diffraction contrast imaging technique combined with image simulations are presented.
| Главные авторы: | , , |
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| Формат: | Conference item |
| Опубликовано: |
2000
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