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TEM study of compositional pro...
Čujuhandieđut
Deakstadieđáhus
Sádde šleađgaboasttain
Čálit
Doalvvo čujuhusa
Doalvun: RefWorks
Doalvun: EndNoteWeb
Doalvun: EndNote
Bissovaš liŋka
TEM study of compositional profile in AlGaAs/GaAs quantum wells
Bibliográfalaš dieđut
Váldodahkkit:
Zou, J
,
Cai, D
,
Cockayne, D
,
Yuan, S
,
Jagadish, C
Materiálatiipa:
Conference item
Almmustuhtton:
1998
Oažžasuvvandieđut
Govvádus
Geahča maid
Bargiidšearbma
Geahča maid
Anodic-oxide-induced interdiffusion in GaAs/AlGaAs quantum wells
Dahkki: Yuan, S, et al.
Almmustuhtton: (1998)
Novel impurity-free interdiffusion in GaAs/AlGaAs quantum wells by anodization and rapid thermal annealing
Dahkki: Yuan, S, et al.
Almmustuhtton: (1997)
GaAs/AlAs/AlGaAs quantum well infrared photodetector
Dahkki: Fan, Weijun
Almmustuhtton: (2008)
Optical properties of arsenic ions implanted GaAs/AlGaAs V-grooved quantum wires
Dahkki: Zhao, Q, et al.
Almmustuhtton: (2000)
V-grooved GaAs/AlGaAs quantum wires with side wall quantum wells intermixed by pulsed anodization and rapid thermal annealing
Dahkki: Kim, Y, et al.
Almmustuhtton: (1996)