Room temperature sub-bandgap photoluminescence from silicon containing oxide precipitates
Room temperature photoluminescence was measured from p-type Czochralski silicon processed to contain oxide precipitates. No detectable luminescence was associated with unstrained oxide precipitates. Strained oxide precipitates gave rise to a broad luminescence peak centred at ∼1600 nm. The intensity...
| Main Authors: | , , |
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| Format: | Journal article |
| Language: | English |
| Published: |
2012
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